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OP803SL - NPN Silicon Phototransistors

Download the OP803SL datasheet PDF. This datasheet also covers the OP800SL variant, as both devices belong to the same npn silicon phototransistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (OP800SL-OPTEKTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OP803SL
Manufacturer OPTEK Technologies
File Size 306.61 KB
Description NPN Silicon Phototransistors
Datasheet download datasheet OP803SL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Types OP800SL thru OP805SL Electrical Characteristics (TA= 25' C unless otherwise noted) SYMBOL PARAMETER I I c ( o ~ ) On-State Collector Current MIN TYP MAX UNITS OP800SL 0.5 OP801SL 0.5 1 3.0 mA mA TEST CONDITIONS ICEO Collector Dark Current V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage I V(BR)ECO Emitter-Collector Breakdown Voltage 1 V(BR)EBO Emitter-Base Breakdown Voltage 1 VCE(SAT) Collector-Emitter Saturation Voltage I 1tr Rise Time tf Fall Time 30 30 5.0 5.0 100 nA V C E = I O V , E ~ = O V. l c = 1 0 0 p A V lc=100pA V I~=100pA I V I~=100pA I I0.40 V Ic = 0.4 mA, Ee= 5 m ~ / c m ~ ( ~ ) ps Vcc = 5 V, Ic = 0.80 mA, ps RL = I 0 0 R, See Test Circuit Typical Performance Curves Collector Dark Current vs.
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