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MJL16218 - POWER TRANSISTOR

Features

  • Q5 MJ11016 R7 2.7 k R8 9.1 k R9 470 + R10 47 C3 10 µF C6 100 µF + LY C4 0.005 R2 R510 SYNC Q1 R3 250 (DC) 8 C5 0.1 6 VCC OUT GND 2 1 100 V R11 470 1W Q3 MJE 15031 T1 R12 470 1W LB D2 MUR460 CY 7 OSC % R6 1k U1 MC1391P D1 MUR110 VCE Q4 DUT R4 22 BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Gapped for LP = 30 µH LB = 1.5 µH CY = 0.01 µF LY = 13 µH 5.

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Datasheet Details

Part number MJL16218
Manufacturer ON
File Size 157.10 KB
Description POWER TRANSISTOR
Datasheet download datasheet MJL16218 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL16218/D ™ Data Sheet SCANSWITCH™ Designer's MJL16218* *Motorola Preferred Device NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJL16218 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. • • • • 1500 Volt Collector–Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Fast Switching: 175 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) • Low Saturation Voltage: 0.2 Volts at 5.0 Amps Collector Current and 2.
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