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MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applications.
Features http://onsemi.com
• Collector−Emitter Sustaining Voltage − • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc • • • • • • •
= 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.
MJD210 Datasheet
