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MJ11029 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

ON

The MJ11029 by ON is a COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS. Below is the official datasheet preview.

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MJ11029 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS by ON - Datasheet Preview — Official preview page of the MJ11029 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS datasheet (ON).

Datasheet Details

Part number	MJ11029
Manufacturer	ON
File Size	116.12 KB
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet	MJ11029_ONSemiconductor.pdf
Additional preview pages of the MJ11029 datasheet.

MJ11029 Product details

Features

High DC Current Gain.
hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc.
Curves to 100 A (Pulsed).
Diode Protection to Rated IC.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor.
Junction Temperature to + 200_C.
Pb.
Free Packages are Available.

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Published: May 7, 2005 |