Datasheet4U Logo Datasheet4U.com

Z0103MA - Silicon Bidirectional Thyristors

Description

of TO 92 Tape Orientation Flat side of TO 92 and adhesive tape visible N/A, Bulk Round side of TO 92 and adhesive tape visible Round side of TO 92 and adhesive tape on reverse side †For information on tape and reel specifications, including part orientation and tape

Features

  • http://onsemi. com.
  • One.
  • Piece, Injection.
  • Molded Package.
  • Blocking Voltage to 600 V.
  • Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all.
  • TRIACS 1.0 AMPERE RMS 600 VOLTS MT2 G MT1 possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (.

📥 Download Datasheet

Datasheet Details

Part number Z0103MA
Manufacturer onsemi
File Size 265.99 KB
Description Silicon Bidirectional Thyristors
Datasheet download datasheet Z0103MA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Z0103MA Standard 1A Triacs STMicroelectronics
Z0103MA 4Q Triac WeEn
Z0103MA 4Q Triac NXP
Z0103MA Sensitive Gate Triacs HAOPIN
Z0103MA0 4Q Triac WeEn

Other Datasheets by onsemi

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Z0103MA Sensitive Gate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive T O−92 package which is readily adaptable for use in automatic insertion equipment. Features http://onsemi.com • One−Piece, Injection−Molded Package • Blocking Voltage to 600 V • Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all • • • • • TRIACS 1.0 AMPERE RMS 600 VOLTS MT2 G MT1 possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C) Commutating di/dt of 1.
Published: |