SZESD9R3.3S ESD Protection Diode

ON Semiconductor

Description

DATA SHEET www.onsemi.com ESD Protection Diode Ultra *Low Capacitance ESD9R3.3S, SZESD9R3.3S The ESD9R is designed to provide ESD protectio.
of survivability specs. Rev.

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Datasheet Specifications

Part number: SZESD9R3.3S
Manufacturer: ON Semiconductor ↗
File Size: 213.23 KB
Datasheet: SZESD9R3.3S-ONSemiconductor.pdf
Description: ESD Protection Diode

Features

* Ultra
* Low Leakage < 1 nA
* Ultra
* Low Capacitance 0.5 pF
* Low Clamping Voltage
* Small Body Outline Dimensions: 0.039
* x 0.024
* (1.00 mm x 0.60 mm)
* Low Body Height: 0.016
* (0.4 mm)
* Stand
* off Voltage: 3.3 V
* Response Time < 1.0 n

Applications

* such as human body sensors. These devices have been designed for leakage under 1 nA from 0C to 50C when turned off. During an ESD event, these devices turn on to clamp the ESD to a safe voltage level for the IC. These devices have the added benefits of low capacitance for high speed data lines and

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