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SS8050 - NPN Epitaxial Silicon Transistor

Description

TO

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Features

  • 2 W Output Amplifier of Portable Radios in Class B Push.
  • Pull Operation.
  • Complementary to SS8550.
  • Collector Current: IC = 1.5 A.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number SS8050
Manufacturer onsemi
File Size 159.64 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet SS8050 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor SS8050 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO 40 V Collector−Emitter Voltage VCEO 25 V Emitter−Base Voltage VEBO 6 V Collector Current IC 1.5 A Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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