PZT65 Datasheet (ON Semiconductor) - HIGH CURRENT NPN SILICON TRANSISTOR

PZT65, HIGH CURRENT NPN SILICON TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT651T1/D NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications.

The device is housed in the SOT 223 package which is designed for medium power surface mount applications.

High Current: 2.0 Amp The SOT 223 package can be soldered using wave or reflow.

SOT 223 package ensures level mounting, resul

PZT65 Features

* f this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING