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NXH80B120H2Q0 - Dual Boost Power Module

Product Overview

ON Semiconductor

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NXH80B120H2Q0 Dual Boost Power Module by ON Semiconductor - Datasheet Preview — Datasheet preview – NXH80B120H2Q0

Datasheet Details

Part number	NXH80B120H2Q0
Manufacturer	ON Semiconductor
File Size	291.00 KB
Description	Dual Boost Power Module
Datasheet	NXH80B120H2Q0 Datasheet
Additional preview pages of the NXH80B120H2Q0 datasheet.

Product details

Features

Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module.
1200 V FSII IGBT VCE(SAT) = 2.2 V.
1200 V SiC Diode VF = 1.4 V.
Low Inductive Layout.
Solderable Pins.
Thermistor.
Bare Copper and Nickel.
Plated DBC Options Typical.

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Published: Apr 1, 2020 |