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NXH450B100H4Q2F2 - Si/SiC Hybrid Module

Description

symmetric boost module.

Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes.

The module contains an NTC thermistor.

Features

  • Silicon/SiC Hybrid Technology Maximizes Power Density.
  • Low Switching Loss Reduces System Power Dissipation.
  • Low Inductive Layout.
  • Press.
  • fit and Solder Pin Options.
  • This Device is Pb.
  • Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450B100H4Q2F2, NXH450B100H4Q2F2PG-R Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • Silicon/SiC Hybrid Technology Maximizes Power Density • Low Switching Loss Reduces System Power Dissipation • Low Inductive Layout • Press−fit and Solder Pin Options • This Device is Pb−Free, Halogen Free and is RoHS Compliant Typical Applications • Solar Inverter • Uninterruptible Power Supplies DATA SHEET www.onsemi.
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