The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NVTFS4C10N
MOSFET – Power, Single N-Channel, m8FL
30 V, 7.4 mW, 47 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C10NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 2, 4)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
15.3 A
TA = 100°C
10.
NVTFS4C10N Datasheet
