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NVMFS6H858NL - N-Channel Power MOSFET

Features

  • Small Footprint (5x6 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • NVMFS6H858NLWF.
  • Wettable Flank Option for Enhanced Optical Inspection.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A V(BR)DSS 80 V RDS(ON) MAX 19.5 mW @ 10 V 25 mW @ 4.
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