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NVD5802N - Power MOSFET

Features

  • 40 V, Single N.
  • Channel, 101 A DPAK.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested AEC Q101 Qualified.
  • NVD5802N These Devices are Pb.
  • Free and are RoHS Compliant http://onsemi. com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.0 V D ID 101 A 50 A Applic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD5802N, NVD5802N Power MOSFET Features 40 V, Single N−Channel, 101 A DPAK • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested AEC Q101 Qualified − NVD5802N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.
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