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NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space • IDSS Specified at Elevated Temperature • Diode Exhibits High Speed, Soft Recovery
Applications
• Power Management for Battery Power Products • Portable Products • Computers, Printers, PCMCIA Cards • Cell Phones, Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
$20
V
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State TA = 70°C
tp v10 s TA = 25°C
9.6
A
7.6
12
Power Dissipation (Note 1)
Steady State tp v10 s
PD
1.56 W
2.
NTMS4404N Datasheet
