NTMFS10N3D2C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTMFS10N3D2C
Manufacturer	ON Semiconductor
File Size	369.80 KB
Description	N-Channel MOSFET
Datasheet	NTMFS10N3D2C-ONSemiconductor.pdf

NTMFS10N3D2C Product details

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology.This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 3.2 mW at VGS = 10 V, ID = 67 A.
Max rDS(on) = 9 mW at VGS = 6 V, ID = 33 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Feb 5, 2023 |