NTJD1155L Datasheet - ON Semiconductor

NTJD1155L P-Channel Power MOSFET

R1 Pullup Resistor R2 Optional Slew *Rate Control CO, CI C1 Output Capacitance Optional In *Rush Current Control *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn *on. Values Typical 10 kW to 1.0 MW * Typical 0 to 100 kW * Usually < 1.0 mF Typical .

NTJD1155L MOSFET Power, P-Channel, High Side Load Switch with Level-Shift, SC-88 8 V, +1.3 A The NTJD1155L integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P Channel device is specifically designed as a load switch using ON Semiconductor state of the art trench technology. The N

NTJD1155L Features

* Extremely Low RDS(on) P

* Channel Load Switch MOSFET

* Level Shift MOSFET is ESD Protected

* Low Profile, Small Footprint Package

* VIN Range 1.8 to 8.0 V

* ON/OFF Range 1.5 to 8.0 V

* These Devices are Pb

* Free and are RoHS Compliant M

NTJD1155L Datasheet (245.45 KB)