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NTHD3133PF - Power MOSFET

Features

  • ăLeadless SMD Package Featuring a MOSFET and Schottky Diode.
  • ă40% Smaller than TSOP-6 Package.
  • ăLeadless SMD Package Provides Great Thermal Characteristics.
  • ăIndependent Pinout to each Device to Ease Circuit Design.
  • ăTrench P-Channel for Low On Resistance.
  • ăUltra Low VF Schottky.
  • ăThese are Pb-Free Devices.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics •ăIndependent Pinout to each Device to Ease Circuit Design •ăTrench P-Channel for Low On Resistance •ăUltra Low VF Schottky •ăThese are Pb-Free Devices Applications •ăLi-Ion Battery Charging •ăHigh Side DC-DC Conversion Circuits •ăHigh Side Drive for Small Brushless DC Motors •ăPower Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS ±8.
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