NTGD1100L - Power MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	NTGD1100L
Manufacturer	ON Semiconductor
File Size	123.48 KB
Description	Power MOSFET
Datasheet	NTGD1100L Datasheet
Additional preview pages of the NTGD1100L datasheet.

Product details

Description

Pullup Resistor Optional Slew Rate Control Output Capacitance Optional In Rush Current Control Values Typical 10 kW to 1.0 MW Typical 0 to 100 kW Usually < 1.0 mF Typical ≤ 1000 pF www.onsemi.com 2 VDROP, (V) RDS(on), DRAIN TO SOURCE RESISTANCE (W) RDS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED) NTGD1100L TYPICAL CHARACTERISTICS 0.400 0.300 0.350 0.300 0.250 0.200 TJ = 125°C 0.250 0.200 0.150 TJ = 125°

Features

Extremely Low RDS(on) Load Switch MOSFET.
Level Shift MOSFET is ESD Protected.
Low Profile, Small Footprint Package.
VIN Range 1.8 to 8.0 V.
ON/OFF Range 1.5 to 8.0 V.
ESD Rating of 2000 V.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Apr 13, 2007 |