NO1L6183A Datasheet (ON Semiconductor) - 1Mb Ultra-Low Power Asynchronous CMOS SRAM

NO1L6183A, 1Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A15 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground ©2008 SCILLC.

July 2008 - Rev.

8 Publicat

N01L6183A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L6183A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB)

NO1L6183A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 0.7mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Si