NIF9N05CL - Protected Power MOSFET

ON Semiconductor

Datasheet Details

VDSS (Clamped) 52 V RDS(ON) TYP 107 mW ID MAX 2.6 A.
Diode Clamp Between Gate and Source ESD Protection.
HBM 5000 V Active Over.
Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb.
Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) RG Overvoltage Protection MPWR.

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Published: Apr 27, 2007 |