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NGTB75N60SWG - IGBT

Key Features

  • a robust and cost effective Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.