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NGTB50N60L2WG - IGBT

Key Features

  • a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT NGTB50N60L2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.