NGTB30N60L2WG N-Channel IGBT

ON Semiconductor

Description

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com .

📥 Download Datasheet

NGTB30N60L2WG Datasheet Preview — Preview of NGTB30N60L2WG PDF

Datasheet Specifications

Part number: NGTB30N60L2WG
Manufacturer: ON Semiconductor ↗
File Size: 764.45 KB
Datasheet: NGTB30N60L2WG-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
* IGBT IC=100A (Tc=25°C)
* IGBT tf=80ns typ.

Applications

* Maximum junction temperature Tj=175°C
* Diode VF=1.7V typ. (IF=30A)
* Diode trr=70ns typ.
* 5μs short circuit capability
* Pb-free, Halogen-free and RoHS Compliance Electrical Connection C G N-channel E Applications
* Power factor correction of w

NGTB30N60L2WG Distributors

📁 Related Datasheet

NGTM2332M091TR20F NGTM2332M152TR10F NGTM2332M351TR20F NGTM2332M362TR05F NGTM2332M471TR20F NGTM2332M601TR20F

📌 All Tags

NGTB30N60L2WG N-Channel IGBT ON Semiconductor

ON Semiconductor NGTB30N60L2WG-like datasheet