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NGTB30N120LWG - IGBT

Key Features

  • a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription (Reference)

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NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.