NDFPD1N150C - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Part number	NDFPD1N150C
Manufacturer	ON Semiconductor ↗
File Size	350.67 KB
Description	N-Channel Power MOSFET
Datasheet	NDFPD1N150C-ONSemiconductor.pdf

On-resistance RDS(on)=100Ω(typ. ).
Input Capacitance Ciss=80pF(typ. ).
10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C TO-220F-3FS Ratings 1500 ±30 0.1 0.2 2.0 20 150 - 55 to +150 Unit V V A A W W °C.

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Published: Jan 25, 2016 |