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N04L63W1A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

N04L63W1A Description

N04L63W1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W1A is an integrated memory device containing a 4 Mbit Static Ra.
1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O.

N04L63W1A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts
* Very low standby current 4.0µA at 3.0V (Typical)
* Very low operating current 2.0mA at 3.0V and 1µs (Typical)
* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
* Simple memory control Sin

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4Mb Ultra-Low Power Asynchronous CMOS SRAM ON Semiconductor
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