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MVB50P03HDLT4G - P-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	MVB50P03HDLT4G
Manufacturer	ON Semiconductor ↗
File Size	135.92 KB
Description	P-Channel Power MOSFET
Datasheet	MVB50P03HDLT4G-ONSemiconductor.pdf

MVB50P03HDLT4G Product details

Features

Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature.
Short Heatsink Tab Manufactured.
Not Sheared.
Specially Designed Leadframe for Maximum Power Dissipation.
MVB Prefix for Automotive and Other.

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Published: Jan 28, 2016 |