MTP4N50E - High Energy Power FET

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ON Semiconductor

Part number	MTP4N50E
Manufacturer	ON Semiconductor
File Size	252.08 KB
Description	High Energy Power FET
Datasheet	MTP4N50E Datasheet
Additional preview pages of the MTP4N50E datasheet.

n current versus re.
applied drain voltage when the source.
drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 13 are present. Full or half.
bridge PWM DC motor controllers are common.

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Published: Jan 16, 2016 |