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MTP2N60E Datasheet - ON Semiconductor

MTP2N60E Power Field Effect Transistor

MTP2N60E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source d.

MTP2N60E Features

* ss 300 200 Coss 100 Crss 0 10 5 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 Ciss 100 Coss 10 1 TJ = 25°C VGS = 0 0.1 10 Crss 100 10 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Fig

MTP2N60E Datasheet (206.15 KB)

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Datasheet Details

Part number:

MTP2N60E

Manufacturer:

ON Semiconductor ↗

File Size:

206.15 KB

Description:

Power field effect transistor.

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MTP2N60E Power Field Effect Transistor ON Semiconductor

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