MTD2N40E Datasheet (ON Semiconductor)

MTD2N40E, Power MOSFET

MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for high voltage, hig

MTD2N40E Features

* rss 0 5 10 15 20 25 1 10 100 1000 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 VGS , GATE