MTB9N25E - High Energy Power FET

Product Overview

ON Semiconductor

Part number	MTB9N25E
Manufacturer	ON Semiconductor
File Size	284.10 KB
Description	High Energy Power FET
Datasheet	MTB9N25E Datasheet
Additional preview pages of the MTB9N25E datasheet.

d to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2000 VDS = 0 V Ciss 1600 VGS = 0 V TJ = 25°C C,.

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Published: Jan 18, 2016 |