PNP Silicon General Purpose High Voltage Transistor
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MSB710−RT1
Preferred Device
PNP General Purpose Amplifier Transistor Surface Mount
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C) Rating
Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
IC IC(P)
Value − 60 − 50 − 7.0 − 500 −1.0
Unit Vdc Vdc Vdc mAdc Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD 200 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
MSB710-RT1 Datasheet
