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MS3003 - P-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	MS3003
Manufacturer	ON Semiconductor
File Size	263.02 KB
Description	P-Channel Power MOSFET
Datasheet	MS3003-ONSemiconductor.pdf

MS3003 Product details

Features

ON-resistance RDS(on)1=5.0mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
-4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--36V, L=100μH, IAV=--60A (Fig.

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Published: Jan 13, 2021 |