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MCH6613 - Power MOSFET

Features

  • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
  • Excellent ON-resistance characteristic.
  • 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP.

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Datasheet Details

Part number MCH6613
Manufacturer onsemi
File Size 232.70 KB
Description Power MOSFET
Datasheet download datasheet MCH6613 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6920C MCH6613 Power MOSFET 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 http://onsemi.com Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting • Excellent ON-resistance characteristic • 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
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