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MC14011B - CMOS Gates

Download the MC14011B datasheet PDF. This datasheet also covers the MC14001B variant, as both devices belong to the same cmos gates family and are provided as variant models within a single manufacturer datasheet.

Description

Quad 2 Input NOR Gate Quad 2 Input NAND Gate Triple 3 Input NAND Gate Triple 3 Input NOR Gate Quad 2 Input OR Gate Triple 3 Input AND Gate MC14081B MC14082B Quad 2 Input AND Gate Dual 4 Input AND Gate ORDERING INFORMATION See detaile

Features

  • Supply Voltage Range = 3.0 Vdc to 18 Vdc.
  • All Outputs Buffered.
  • Capable of Driving Two Low.
  • power TTL Loads or One Low.
  • power Schottky TTL Load Over the Rated Temperature Range.
  • Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B.
  • Pin.
  • for.
  • Pin Replacements for Corresponding CD4000 Series B Suffix Devices.
  • NLV Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MC14001B-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MC14011B B-Suffix Series CMOS Gates Motorola
MC14011N MC14010N / MC14011N Unitra Cemi
MC14011UB Dual 3-Input NOR Gate Plus Inverter Motorola
MC14010AL (MC14009xx / MC14010xx) Buffers Motorola
MC14010CL (MC14009xx / MC14010xx) Buffers Motorola

Other Datasheets by onsemi

Part Number Description
MC14011UB UB-Suffix Series CMOS Gates
MC14012B Dual 4-Input NAND Gates
MC14013B Dual Type D Flip-Flop
MC14014B 8-Bit Static Shift Register
MC14015B Dual 4-Bit Static Shift Register

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com B-Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC14001B Series The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features  Supply Voltage Range = 3.0 Vdc to 18 Vdc  All Outputs Buffered  Capable of Driving Two Low−power TTL Loads or One Low−power Schottky TTL Load Over the Rated Temperature Range.
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