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MBT3906DW1 - Dual General Purpose Transistor

Features

  • http://onsemi. com.
  • hFE, 100.
  • 300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel S Prefix for Automotive and Other.

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Datasheet Details

Part number MBT3906DW1
Manufacturer onsemi
File Size 214.41 KB
Description Dual General Purpose Transistor
Datasheet download datasheet MBT3906DW1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low −power surface mount applications where board space is at a premium. Features http://onsemi.com • • • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.
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