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MBRF20100CT SWITCHMODE Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal −to −silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low −voltage, high −frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features http://onsemi.com
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Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated.
MBRF20100CT Datasheet
