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MBR2030CTL - Dual Schottky Power Rectifier

ON Semiconductor

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Datasheet Details

Part number	MBR2030CTL
Manufacturer	ON Semiconductor
File Size	237.55 KB
Description	Dual Schottky Power Rectifier
Datasheet	MBR2030CTL-ONSemiconductor.pdf

MBR2030CTL Product details

Features

Highly Stable Oxide Passivated Junction.
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C).
High Junction Temperature.
High dv/dt Capability.
Excellent Ability to Withstand Reverse Avalanche Energy Transients.
Low Power Loss/High Efficiency.
High Surge Capacity.
175°C Operating Junction Temperature.
20 A Total (10 A Per Diode Leg).
This Device is Pb.
Free and is RoHS Compliant.
Applicat.

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Published: Nov 6, 2016 |