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KSC1845 - NPN Epitaxial Silicon Transistor

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components I

Features

  • Audio Frequency Low.
  • Noise Amplifier.
  • Complement to KSA992.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number KSC1845
Manufacturer onsemi
File Size 163.77 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSC1845 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor KSC1845 Features • Audio Frequency Low−Noise Amplifier • Complement to KSA992 • This is a Pb−Free Device MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 120 V VCEO Collector−Emitter Voltage 120 V VEBO Emitter−Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.
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