IRF830 Power Field Effect Transistor

ON Semiconductor

IRF830 Description

IRF830 Power Field Effect Transistor N *Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high spee.

IRF830 Applications

* such as switching regulators, converters, solenoid and relay drivers.
* Silicon Gate for Fast Switching Speeds
* Low RDS(on) to Minimize On
* Losses, Specified at Elevated Temperature
* Rugged
* SOA is Power Dissipation Limited
* Source
* to

📥 Download Datasheet

IRF830 Datasheet Preview — Preview of IRF830 PDF

Datasheet Details

Part number: IRF830
Manufacturer: ON Semiconductor ↗
File Size: 109.97 KB
Datasheet: IRF830-ONSemiconductor.pdf
Description: Power Field Effect Transistor

📁 Related Datasheet

IRF8301MPbF - Power MOSFET (International Rectifier)
IRF8301MTRPBF - Power MOSFET (International Rectifier)
IRF8302MPBF - Power MOSFET (International Rectifier)
IRF8304MPBF - Power MOSFET (International Rectifier)
IRF8306MPBF - Power MOSFET (International Rectifier)
IRF8308MPBF - POWER MOSFET (International Rectifier)
IRF8308MTRPbF - POWER MOSFET (International Rectifier)
IRF830A - Power MOSFET (Vishay)

📌 All Tags

Power Field Effect Transistor ON Semiconductor

ON Semiconductor IRF830-like datasheet

IRF530 - Power Field Effect Transistor
IRF644B - N-Channel BFET MOSFET
IRFM120A - Power MOSFET
IRFR220B - 200V N-Channel MOSFET
IRFU220B - 200V N-Channel MOSFET
IRFW630B - N-Channel MOSFET