The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
IRF830
Power Field Effect Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) to Minimize On−Losses, Specified at Elevated
Temperature
• Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use with Inductive Loads
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.
IRF830 Datasheet
