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HGTP7N60A4D - N-Channel IGBT

Download the HGTP7N60A4D datasheet PDF. This datasheet also covers the HGTG7N60A4D variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Description

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (

Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The much lower on.
  • state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti.
  • parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGTG7N60A4D-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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HGTP7N60A4 N-Channel IGBT Intersil Corporation
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Other Datasheets by onsemi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti−parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
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