FQH8N100C Datasheet (ON Semiconductor)

FQH8N100C, N-Channel MOSFET

This N *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch

FQH8N100C Features

* 8 A, 1000 V, RDS(on) = 1.45ĂW (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 53 nC)

* Low Crss (Typ. 16 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* This Device is Pb

* Free and is RoHS Compliant www.onsemi.c