FGH60N60SMD - IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGH60N60SMD
Manufacturer	ON Semiconductor
File Size	481.22 KB
Description	IGBT
Datasheet	FGH60N60SMD Datasheet
Additional preview pages of the FGH60N60SMD datasheet.

Product details

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 60 A.
High Input Impedance.
Fast Switching: EOFF = 7.5 uJ/A.
Tightened Parameter Distribution.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Apr 1, 2020 |