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FGH40N65UFDTU-F085 - IGBT

Download the FGH40N65UFDTU-F085 datasheet PDF. This datasheet also covers the FGH40N65UFDTU variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A.
  • High Input Impedance.
  • Fast Switching.
  • Qualified to Automotive Requirements of AEC.
  • Q101 (FGH40N65UFDTU.
  • F085).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGH40N65UFDTU-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N65UFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS www.onsemi.
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