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FFSH5065A-F155 - SiC Schottky Diode

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 240 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, TO-247-3L FFSH5065A-F155 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
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