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FFSD0465A - Silicon Carbide Schottky Diode

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 25 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant.

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Datasheet Details

Part number FFSD0465A
Manufacturer onsemi
File Size 406.82 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSD0465A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK FFSD0465A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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