FDY1002PZ Datasheet (ON Semiconductor)

FDY1002PZ, Dual P-Channel MOSFET

These P *Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications w

FDY1002PZ Features

* Max rDS(on) = 0.5 W at VGS =

* 4.5 V, ID =

* 0.83 A

* Max rDS(on) = 0.7 W at VGS =

* 2.5 V, ID =

* 0.70 A

* Max rDS(on) = 1.2 W at VGS =

* 1.8 V, ID =

* 0.43 A

* Max rDS(on) = 1.8 W at VGS =

* 1.5 V, ID =

* 0.3