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FDS6975 - Dual P-Channel MOSFET

Description

These P-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 FD69S75 SO-8 G2 S2 pin 1 G1 S1 SO-8 SOT-223 SOIC-16 54 63 72 81 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuo.

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Datasheet Details

Part number FDS6975
Manufacturer onsemi
File Size 389.94 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS6975 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
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