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FDS6900AS-G - Dual N-Channel MOSFET

Download the FDS6900AS-G datasheet PDF. This datasheet also covers the FDS6900AS variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc

dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

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Features

  • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
  • RDS(on) = 22 mW at VGS = 10 V.
  • RDS(on) = 28 mW at VGS = 4.5 V.
  • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
  • RDS(on) = 27 mW at VGS = 10 V.
  • RDS(on) = 34 mW at VGS = 4.5 V.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDS6900AS-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6900AS Dual N-Ch PowerTrench SyncFET Fairchild Semiconductor
FDS6900S Dual N-Ch PowerTrench SyncFet Fairchild Semiconductor
FDS6910 MOSFET Fairchild Semiconductor
FDS6911 MOSFET Fairchild Semiconductor
FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS6900AS Dual N-Channel MOSFET
FDS6910 Dual N-Channel MOSFET
FDS6912A Dual N-Channel MOSFET
FDS6930A Dual N-Channel MOSFET
FDS6961A Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G General Description The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
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