FDMD86100 Datasheet (ON Semiconductor)

FDMD86100, Dual N-Channel MOSFET

This package integrates two N *Channel devices connected internally in common *source configuration and incorporates Shielded Gate technology.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Provides a very small footprint (5

FDMD86100 Features

* Common Source Configuration to Eliminate PCB Routing

* Large Source Pad on Bottom of Package for Enhanced Thermals

* Shielded Gate MOSFET Technology

* Max rDS(on) = 10.5 mW at VGS = 10 V, ID = 10 A

* Max rDS(on) = 17.3 mW at VGS = 6 V, ID = 7.8 A

* I